专利内容由知识产权出版社提供
专利名称：CURRENT-PERPENDICULAR-TO-PLANE
MAGNETO-RESISTANCE EFFECT ELEMENT
发明人：DU Ye,FURUBAYASHI Takao,TAKAHASHI
Yukiko,HONO Kazuhiro
申请号：EP14778602.4申请日：20140402公开号：EP2983219B1公开日：20180328
摘要：The CPPGMR element of the present invention has an orientation layer 12formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlyinglayer 13 that is an electrode for magneto-resistance measurement stacked on theorientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15sandwiched between the lower ferromagnetic layers 14 and the upper ferromagneticlayers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using acurrent-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin filmhaving a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/aferromagnetic metal, thereby showing excellent performances.
申请人：NAT INSTITUTE FOR MATERIALS SCIENCE
地址：JP
国籍：JP
代理机构：Calamita, Roberto
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