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专利名称：Method of processing a substrate, heating
apparatus, and method of forming a pattern
发明人：Kenji Kawano,Shinichi Ito,Eishi Shiobara申请号：US11029375申请日：20050106公开号：US07294586B2公开日：20071113
专利附图：
摘要：A method of processing a substrate, comprising forming a chemically amplifiedresist film on a substrate, irradiating energy beams to the chemically amplified resist filmto form a latent image therein, carrying out heat treatment with respect to the
chemically amplified resist film, heating treatment being carried out in a manner ofrelatively moving a heating section for heating the chemically amplified resist film and thesubstrate forming a gas stream flowing reverse to the relatively moving direction of theheating section between the lower surface of the heating section and the chemicallyamplified resist film.
申请人：Kenji Kawano,Shinichi Ito,Eishi Shiobara
地址：Yokohama JP,Yokohama JP,Inagi JP
国籍：JP,JP,JP
代理机构：Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
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