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Philips Semiconductors
Product specification
Silicon Diffused Power TransistorBU2523AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOLVCESMVCEOICICMPtotVCEsatICsattf
PARAMETER
Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)
Collector current peak valueTotal power dissipation
Collector-emitter saturation voltageCollector saturation currentFall time
CONDITIONSVBE = 0 V
TYP.------5.50.15
MAX.15008001129455.0-0.3
UNITVVAAWVAµs
Ths ≤ 25 ˚C
IC = 5.5 A; IB = 1.1 Af = kHz
ICsat = 5.5 A; f = kHz
PINNING - SOT199
PIN123basecollectoremitterDESCRIPTIONPIN CONFIGURATION
caseSYMBOL
cbcaseisolated123eLIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOLVCESMVCEOICICMIBIBM-IB(AV)-IBMPtotTstgTj
PARAMETER
Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)
Collector current peak valueBase current (DC)
Base current peak valueReverse base current
Reverse base current peak value 1Total power dissipationStorage temperatureJunction temperature
CONDITIONSVBE = 0 V
MIN.----------55-MAX.15008001129710175745150150
UNITVVAAAAmAAW˚C˚C
average over any 20 ms periodThs ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOLRth j-hsRth j-a
PARAMETERJunction to heatsinkJunction to ambient
CONDITIONS
with heatsink compoundin free air
TYP.-35
MAX.2.8-UNITK/WK/W
1 Turn-off current.
September 19971Rev 1.100
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Philips Semiconductors
Product specification
Silicon Diffused Power TransistorBU2523AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specifiedSYMBOLVisolCisol
PARAMETER
Repetitive peak voltage from allthree terminals to externalheatsink
CONDITIONS
R.H. ≤ 65 % ; clean and dustfree
MIN.--22TYP.
MAX.2500-UNITVpF
Capacitance from T2 to externalf = 1 MHzheatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specifiedSYMBOLICESICESIEBOBVEBOVCEOsustVCEsatVBEsathFEhFE
PARAMETER
Collector cut-off current 2
Emitter cut-off current
Emitter-base breakdown voltageCollector-emitter sustaining voltageCollector-emitter saturation voltageBase-emitter saturation voltageDC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmaxVBE = 0 V; VCE = VCESMmax;Tj = 125 ˚C
VEB = 7.5 V; IC = 0 AIB = 1 mA
IB = 0 A; IC = 100 mA;L = 25 mH
IC = 5.5 A; IB = 1.1 AIC = 5.5 A; IB = 1.1 AIC = 1 A; VCE = 5 VIC = 5.5 A; VCE = 5 V
MIN.---7.5800---5
TYP.---13.5---148
MAX.1.02.01.0--5.01.0-10.3
UNITmAmAmAVVVV
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specifiedSYMBOL
PARAMETER
Switching times ( kHz linedeflection circuit)
tstf
Turn-off storage timeTurn-off fall time
CONDITIONS
ICsat = 5.5 A; LC = 200 µH; Cfb = 4 nF;VCC 145 V; IB(end) = 0.56 A;
LB = 0.4 µH; -VBB = -4 V; -IBM = 3.3 A
TYP.
MAX.
UNIT
1.50.152.00.3µsµs
TRANSISTORICDIODEICsatICsat90 %tIBI endBt5 us6.5 us16 usV CEtIC10 %tftsIBIBendtt- IBMFig.1. Switching times waveforms.Fig.2. Switching times definitions.2 Measured with half sine-wave voltage (curve tracer).
September 19972Rev 1.100
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
Silicon Diffused Power TransistorBU2523AF
+ 150 v nominal adjust for ICsat10VCEsat / VThs = 25 CThs = 85 CBU2523AF/XLc1IC/IB = 10IC/IB = 5IBendLBT.U.T.0.1Cfb-VBB0.010.1110IC / A100Fig.3. Switching times test circuit.Fig.6. Typical collector-emitter saturation voltage.VCEsat = f (IC); parameter IC/IB100hFEVCE = 1 VBU2523AF/X1.2VBEsat / VBU2523AF/XThs = 25 CThs = 85 CIC = 6 AThs = 25 CThs = 85 C1.11100.90.8IC = 4.5 A0.70.610.010.1110IC / A1000123IB / A4Fig.4. High and low DC current gain. hFE = f (IC)VCE = 1 VhFEVCE = 5 VBU2523AF/XFig.7. Typical base-emitter saturation voltage.VBEsat = f (IB); parameter IC100PTOT / W100BU2523AF/DF/AX/DXThs = 25 CThs = 85 CThs = 25 CThs = 85 C101010.010.1110IC / A100100.51IB / A1.52Fig.5. High and low DC current gain. hFE = f (IC)VCE = 5 VFig.8. Typical losses.PTOT = f (IB); IC =5.5 A; f = kHzSeptember 19973Rev 1.100
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
Silicon Diffused Power TransistorBU2523AF
ts/tf / us5BU2523AF/DF/AX/DXVCC4LC32IBendVCLLBT.U.T.CFB1-VBB000.511.5IB / A2Fig.9. Typical collector storage and fall time.ts = f (IB); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = kHzFig.12. Test Circuit RBSOA. VCC = 150 V;-VBB = 1 - 5 V;LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;CFB = 0.5 - 8 nF; IB(end) = 0.55 - 1.1 AIC / A30120 110 100 90 80 70 60 50 40 30 20 10 0 PD%Normalised Power Deratingwith heatsink compoundBU252320Area wherefails occur1001001000VCE / V 1500 020406080Ths / C100120140Fig.10. Normalised power dissipation.PD% = 100⋅PD/PD 25˚C = f (Tmb)Zth / (K/W)BU2525AFFig.13. Reverse bias safe operating area. Tj ≤ Tjmax10 87Ic(sat) (A)BU2523AF/AX1 0.50.20.10.050.026543PDtpD = tpTt0.1 0.01 D = 00.001 1E-0621T01E-041E-02t / s1E+0001020304050607080frequency (kHz)Fig.11. Transient thermal impedance.Zth j-hs = f(t); parameter D = tp/TFig.14. ICsat during normal running vs. frequency ofoperation for optimum performanceSeptember 19974Rev 1.100
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
Silicon Diffused Power TransistorBU2523AF
MECHANICAL DATA
Dimensions in mmNet Mass: 5.5 g15.3 max0.77.33.13.36.25.821.5max3.25.2 maxo45seatingplane3.515.7min12.1 max231.21.05.453.5 maxnot tinned0.7 max0.4M2.05.45Fig.15. SOT199; The seating plane is electrically isolated from all terminals.Notes
1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8\".
September 19975Rev 1.100
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
Silicon Diffused Power TransistorBU2523AF
DEFINITIONS
Data sheet statusObjective specificationProduct specificationLimiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information
Where application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.This data sheet contains final product specifications.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
September 19976Rev 1.100
