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专利名称：Plasma processing equipment发明人：植 喜信,小倉 祥吾申请号：JP2019081857申请日：20190423公开号：JP2020181840A公开日：20201105
专利附图：
摘要：PROBLEM TO BE SOLVED: To homogenize a return current, prevent particlegeneration, and facilitate adjustment of plasma generation conditions. SOLUTION: Theplasma processing apparatus 1 has an electrode flange 4, a chamber 2, an insulatingflange 81, a processing chamber 101 having a reaction chamber, a support portion
(susceptor) 15 on which a substrate 10 is placed, and a support portion (susceptor) 15. Abase plate 17 electrically connected to a support portion, an elevating drive portion 16A,a high frequency power supply 9 to which a high frequency voltage is applied, a capacitorforming portion 30 provided around the edge of the upper surface of the base plate, anda capacitor forming of the base plate. Capacitor forming portions 30 are provided on thelower surface of the side wall of the chamber facing the portions, and a gap G is formedbetween the upper surface of the base plate and the lower surface of the chamber, andthe capacitor forming portions facing each other are formed. In the meantime, a capacitorfor the high frequency return current at the time of plasma formation is formed at aposition on the entire circumference of the substrate. [Selection diagram] Fig. 1
申请人：株式会社アルバック
地址：神奈川県茅ヶ崎市萩園２５００番地
国籍：JP
代理人：及川 周,勝俣 智夫,土屋 亮
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