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专利名称：Method of etching a silicon substrate发明人：Yoshinao Ogata,Masataka Kato,Masaya
Uyama
申请号：US14322235申请日：20140702公开号：US09548207B2公开日：20170117
专利附图：
摘要：A method of etching a silicon substrate, in which a depressed portion is formedby etching a first surface of the silicon substrate with ions generated in plasma, themethod including introducing a rare gas into a reaction system to ionize the rare gas.
申请人：CANON KABUSHIKI KAISHA
地址：Tokyo JP
国籍：JP
代理机构：Fitzpatrick, Cella, Harper & Scinto
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