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Boosting technique for a bi-directional switch in

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专利名称:Boosting technique for a bi-directional

switch in a power converter

发明人:Jan Dikken,Peter T. J. Degen申请号:US11995599申请日:20060719公开号:US07906953B2公开日:20110315

专利附图:

摘要:A bi-directional switch for a power converter comprises first and secondtransistors (SW, SW) and a floating supply capacitor (C) associated with the secondtransistor (SW). The drive circuit and/or gate of the first transistor (SW) is charged by the

floating supply capacitor (C) of the second transistor (SW). The charging takes place at apredetermined moment in the switching cycle, and in particular at a moment in theswitching cycle when the voltage across the bi-directional switch is substantially aminimum.

申请人:Jan Dikken,Peter T. J. Degen

地址:Wijchen NL,Arnhem NL

国籍:NL,NL

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