专利内容由知识产权出版社提供
专利名称：NITRIDE SEMICONDUCTOR LASER DEVICE
AND NITRIDE SEMICONDUCTOR DEVICE
发明人：Yuji MATSUYAMA,Shinji SUZUKI,Kousuke
ISE,Atsuo MICHIUE,Akinori YONEDA
申请号：US12100247申请日：20080409
公开号：US20080192788A1公开日：20080814
专利附图：
摘要：A nitride semiconductor laser device includes, on a first principle face of the(0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first
conductivity type, an active layer, and a nitride semiconductor layer having a secondconductivity type that is different from the first conductivity type, and being formed astripe ridge on the surface thereof. The (000-1) face and an inclined face other than the(000-1) face are exposed on a second principal face of the nitride semiconductor
substrate. The inclined face other than the (000-1) face represents no less than 0.5% overthe surface area of the second principal face.
申请人：Yuji MATSUYAMA,Shinji SUZUKI,Kousuke ISE,Atsuo MICHIUE,Akinori YONEDA
地址：Tokushima JP,Naka-gun JP,Naka-gun JP,Anan-shi JP,Anan-shi JP
国籍：JP,JP,JP,JP,JP
更多信息请下载全文后查看
