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专利名称：Nitride semiconductor laser device and
nitride semiconductor laser apparatus
发明人：Shigetoshi Ito,Kunihiro Takatani,Susumu Omi申请号：US11922986申请日：20060602公开号：US07804880B2公开日：20100928
专利附图：
摘要：In one embodiment of the present invention, a long-life nitride semiconductorlaser element is disclosed wherein voltage characteristics do not deteriorate even whenthe element is driven at high current density. Specifically disclosed is a nitride
semiconductor laser element which includes a p-type nitride semiconductor and a p-sideelectrode formed on the p-type nitride semiconductor. In at least one embodiment, thep-side electrode has a first layer which is in direct contact with the p-type nitridesemiconductor and a conductive second layer formed on the first layer, and the secondlayer contains a metal element selected from the group consisting of Ti, Zr, Hf, W, Moand Nb, and an oxygen element.
申请人：Shigetoshi Ito,Kunihiro Takatani,Susumu Omi
地址：Shijonawate JP,Nara JP,Mihara JP
国籍：JP,JP,JP
代理机构：Harness, Dickey & Pierce, P.L.C.
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