AP3400MI
Description
The AP3400MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
30V N-Channel Enhancement Mode MOSFET
General Features
VDS = 30V,ID = 5.8A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=10V
Application
High power and current handing capability Lead free product is acquired Surface mount package PWM applications Load switch Power management
Package Marking and Ordering Information
Product ID AP3400MI
Pack SOT23-3 Marking X01V -34 Qty(PCS) 3000PCS Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient (Note 2) Symbol VDS VGS ID IDM PD TJ,TSTG RθJA Limit 30 ±12 5.8 30 1.4 -55 To 150 Unit V V A A W ℃ ℃/W 1 AP3400MI Rve:3.8
臺灣永源微電子科技有限公司
AP3400MI
Max - 1 ±100 1.4 V μA nA V mΩ mΩ mΩ S PF PF PF nS nS nS nS nC nC nC V A
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage 30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol BVDSS IDSS IGSS VGS(th) VGS=0V ID=250μA VDS=30V,VGS=0V VGS=±12V,VDS=0V VDS=VGS,ID=250μA VGS=2.5V, ID=4A Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=5A VGS=10V, ID=5.8A Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS VDS=15V,ID=5.8A, VGS=4.5V VGS=0V,IS=5.8A VDD=15V, RL=2.7Ω VGS=10V,RGEN=3Ω VDS=15V,VGS=0V, F=1.0MHz VDS=5V,ID=5A Condition Min Typ 30 - - 0.7 - - - 10 - - - - - - - - - - - - 33 - - 0.9 Unit 41 28 24 - 825 100 78 3.3 4.8 26 4 10 1.6 3.1 - - 55 42 40 - - - - - - - - - - - 1.2 5.8 Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
2 AP3400MI Rve:3.8
臺灣永源微電子科技有限公司
AP3400MI
30V N-Channel Enhancement Mode MOSFET
Typical Electrical and Thermal Characteristics
VddVinRlDVout
VgsRgenGS Figure 1:Switching Test Circuit
)W(rewoP DPTJ-Junction Temperature(℃)
Figure 3 Power Dissipation
)A( tnerruC niarD -DIVds Drain-Source Voltage (V)
Figure 5 Output Characteristics AP3400MI Rve:3.8
tonttofftd(on)rtd(off)tf90%90%VOUTINVERTED10%10%90%VIN50%50%10%PULSE WIDTH
Figure 2:Switching Waveforms
）A( tnerruC niarD -DI
.
TJ-Junction Temperature(℃)
Figure 4 Drain Current
)Ω(ecnatsiseR-nO nosdR
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
3 臺灣永源微電子科技有限公司
AP3400MI
30V N-Channel Enhancement Mode MOSFET
)A( tnerruC niarD -DI
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
)Ω(ecnatsiseR-nO nosdRVgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
)V( egatlVo ecruoS-etaG sgVQg Gate Charge (nC)
Figure 11 Gate Charge
AP3400MI Rve:3.8
ecnatsiseR-nO dezilamroN
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
)Fp( ecnaticapaC C
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
)A( tnerruC niarD esreveR -sI
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
4 臺灣永源微電子科技有限公司
AP3400MI
30V N-Channel Enhancement Mode MOSFET
)A( tnerruC niarD -DI
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
ec envaitdceepffEmI dleazmirlaemhrT otNn,e)its(rnaTr.
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
AP3400MI Rve:3.8 臺灣永源微電子科技有限公司
5
AP3400MI
30V N-Channel Enhancement Mode MOSFET
SOT23-3 PACKAGE INFORMATION
6 AP3400MI Rve:3.8
臺灣永源微電子科技有限公司
AP3400MI
30V N-Channel Enhancement Mode MOSFET Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support
systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics
representative nearest you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability
products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the \"Delivery Specification\" for the APM Microelectronics product that you Intend to use.
9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change witho
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